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IRF3205PBF Si 55V 110A N Channel MOSFET Transistor

    Buy cheap IRF3205PBF Si 55V 110A N Channel MOSFET Transistor from wholesalers
     
    Buy cheap IRF3205PBF Si 55V 110A N Channel MOSFET Transistor from wholesalers
    • Buy cheap IRF3205PBF Si 55V 110A N Channel MOSFET Transistor from wholesalers

    IRF3205PBF Si 55V 110A N Channel MOSFET Transistor

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    Brand Name : Infi neon
    Model Number : IRF3205PBF
    Certification : Original Part
    Price : to be Negotiated
    Payment Terms : T/T, Western Union, Paypal, Wechat Pay
    Supply Ability : 1 Million pieces per Month
    Delivery Time : Immediate
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    IRF3205PBF Si 55V 110A N Channel MOSFET Transistor

    IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube



    Basic Parameters :

    • Advanced Process Technology.
    • Ultra Low On-Resistance.
    • Dynamic dv/dt Rating.
    • 175°C Operating Temperature.
    • Fast Switching.
    • Fully Avalanche Rated.
    • Lead-Free.



    Absolute Maximum Ratings :



    Description :

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



    Technical Specifications :


    TabTab
    Package Width4.83(Max)
    Package Height9.02(Max)
    Package Length10.67(Max)
    PCB changed3
    Lead ShapeThrough Hole
    MountingThrough Hole
    Product CategoryPower MOSFET
    MaterialSi
    ConfigurationSingle
    Process TechnologyHEXFET
    Channel ModeEnhancement
    Channel TypeN
    Number of Elements per Chip1
    Maximum Drain Source Voltage (V)55
    Maximum Gate Source Voltage (V)±20
    Maximum Continuous Drain Current (A)110
    Maximum Drain Source Resistance (mOhm)8@10V
    Typical Gate Charge @ Vgs (nC)146(Max)@10V
    Typical Gate Charge @ 10V (nC)146(Max)
    Typical Input Capacitance @ Vds (pF)3247@25V
    Maximum Power Dissipation (mW)200000
    Typical Fall Time (ns)65
    Typical Rise Time (ns)101
    Typical Turn-Off Delay Time (ns)50
    Typical Turn-On Delay Time (ns)14
    Minimum Operating Temperature (°C)-55
    Maximum Operating Temperature (°C)175
    PackagingTube
    AutomotiveNo
    Supplier PackageTO-220AB
    Standard Package NameTO-220
    Pin Count3
    MilitaryNo





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